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NJG1116HB3 - 1 - 5 6 7 2 3 8 1 4 2.1ghz band lna gaas mmic general description package outline NJG1116HB3 is a lna ic designed for 2.1ghz band w-cdma cellular phone .this ic has the function which passes lna, and high gain mode or low gain mode can be chosen. an ultra small and ultra thin package of usb8 is adopted. features low voltage operation +2.7v typ low current consumption 2.0ma typ. @v ctl =2.7v 2ua typ. @v ctl =0v high gain 14.7db typ. @v ctl =2.7v, f rf =2140mhz low noise figure 1.6db typ. @v ctl =2.7v, f rf =2140mhz pout at 1db gain compression point -13.0dbm typ. @v ctl =2.7v, f rf =2140mhz +11.0dbm typ. @v ctl =0v, f rf =2140mhz high input ip3 -3dbm typ. @v ctl =2.7v, f rf =2140mhz +3dbm typ. @v ctl =0v, f rf =2140mhz small package usb8-b3 (package size: 1.5x1.5x0.75mm) pin configuration note: specifications and description listed in this catalog are subject to change without prior notice. NJG1116HB3 hb3 type (top view) pin connection 1.v inv 2.gnd 3.rf out 4.gnd 5.rf in 6.gnd 7. v ctl 8. gnd
NJG1116HB3 - 2 - absolute maximum ratings (t a =+25c, z s =z l =50 ? ) parameters symbol conditions ratings units operating voltage v dd 5.0 v inverter supply voltage v inv 5.0 v control voltage v ctl 5.0 v input power pin v dd =2.7v +15 dbm power dissipation p d 135 mw operating temperature t opr -40~+85 c storage temperature t stg -55~+125 c electrical characteristics 1 (dc) (v dd =v inv =2.7v, t a =+25c, z s =z l =50 ? ) parameters symbol conditions min typ max units operating voltage v dd 2.5 2.7 4.5 v inverter supply voltage v inv 2.5 2.7 4.5 v control voltage (high) v ctl(h) 2.0 2.7 v inv v control voltage (low) v ctl(l) 0 0 0.8 v operating current1 i dd1 rf off, v ctl =2.7v - 2.0 2.7 ma operating current2 i dd2 rfoff, v ctl =0v - 2 30 ua inverter current1 i inv1 rf off, v ctl =2.7v - 50 100 ua inverter current2 i inv2 rf off, v ctl =0v - 110 200 ua control current i ctl rf off, v ctl =2.7v - 20 50 ua
NJG1116HB3 - 3 - electrical characteristics 2 (lna high gain mode) (v dd =v inv =2.7v, v ctl =2.7v, freq=2140mhz, t a =+25c, z s =z l =50 ? , test circuit) parameters symbol conditions min typ max units operating frequency freq 2110 2140 2170 mhz small signal gain1 gain1 13.0 14.7 16.0 db noise figure1 nf1 - 1.6 2.0 db pin at 1db gain compression point1 p -1db(in)1 -16.0 -13.0 - dbm input 3rd order intercept point iip3_1 f1=frf, f2=frf+100khz, pin=-36dbm -6.0 -3.0 - dbm rf input vswr1 vswr i 1 - 1.5 2.0 - rf output vswr1 vswr o 1 - 1.5 2.2 - electrical characteristics 2 (lna low gain mode) (v dd =v inv =2.7v, v ctl =0v, freq=2140mhz, t a =+25c, z s =z l =50 ? , test circuit) parameters symbol conditions min typ max units operating frequency freq 2110 2140 2170 mhz small signal gain2 gain2 -5.0 -4.0 -2.5 db noise figure2 nf2 - 4.0 5.0 db pin at 1db gain compression point2 p -1db(in)2 +8.0 +11.0 - dbm input 3rd order intercept point2 iip3_2 f1=frf, f2=frf+100khz, pin=-36dbm 0 +3.0 - dbm rf input vswr2 vswr i 2 - 1.9 2.3 - rf output vswr2 vswr o 2 - 1.7 2.1 -
NJG1116HB3 - 4 - terminal infomation caution 1) ground terminal (no.2, 4, 6, 8) should be connected to the ground plane as low inductance as possible. truth table v ctl operating current bypass circuit lna mode l off on low gain mode h on off high gain mode ?h?=v ctl (h), ?l?=v ctl (l) no. symbol description 1 vinv inverter voltage supplies terminal. 2 gnd ground terminal. (0v) 3 rfout rf output terminal. the rf signal is output through external matching circuit connected to this terminal. please connected inductance l3 and power supply as shown in test circuit, since this terminal is also the terminal of lna power supply. 4 gnd ground terminal. (0v) 5 rfin rf input terminal. the rf signal is input through external matching circuit connected to this terminal. a dc blocking capacitor is not required. 6 gnd ground terminal. (0v) 7 vctl control voltage supply terminal. the high level voltage of this terminal controls lna high gain mode. the low level voltage of this terminal controls lna low gain mode. 8 gnd ground terminal. (0v)
NJG1116HB3 - 5 - electrical characteristics (lna high gain mode) -25 -20 -15 -10 -5 0 5 10 -40 -30 -20 -10 0 10 pout vs. pin pout (dbm) pin (dbm) p-1db(in)=-14.0dbm pout (f=2.14ghz, v dd =v inv =v ctl =2.7v) 2 4 6 8 10 12 14 16 18 -40 -30 -20 -10 0 10 gain vs. pin gain (db) pin (dbm) gain p-1db(in)=-14.0dbm (f=2.14ghz, v dd =v inv =v ctl =2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 2 2.05 2.1 2.15 2.2 2.25 2.3 nf vs. frequency noise figure (db) frequency (ghz) nf (v dd =v inv =v ctl =2.7v) -100 -80 -60 -40 -20 0 20 -40 -30 -20 -10 0 10 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout im3 (f=2.14+2.1401ghz, v dd =v inv =v ctl =2.7v) 6 7 8 9 10 11 12 13 14 -6 -5 -4 -3 -2 -1 0 1 2 2.1 2.12 2.14 2.16 2.18 2.2 oip3, iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) oip3 iip3 (df=100khz, pin=-36dbm, v dd =v inv =v ctl =2.7v) -22 -20 -18 -16 -14 -12 -10 -8 2.1 2.12 2.14 2.16 2.18 2.2 p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) (v dd =v inv =v ctl =2.7v)
NJG1116HB3 - 6 - electrical characteristics (lna high gain mode) 9 10 11 12 13 14 15 16 17 0.5 1 1.5 2 2.5 3 3.5 4 4.5 22.533.544.55 gain, nf vs. v dd gain (db) nf (db) v dd (v) (f=2.14ghz, v inv =v ctl =2.7v) gain nf 7 8 9 10 11 12 13 14 15 -5 -4 -3 -2 -1 0 1 2 3 22.533.544.55 oip3, iip3 vs. v dd oip3 (dbm) iip3 (dbm) v dd (v) (f=2.14+2.1401ghz, pin=-36dbm, v inv =v ctl =2.7v) oip3 iip3 -22 -20 -18 -16 -14 -12 -10 -8 -6 22.533.544.55 p-1db(in) vs. v dd p-1db(in) (dbm) v dd (v) (f=2.14ghz, v inv =v ctl =2.7v) p-1db(in) 0 0.5 1 1.5 2 2.5 3 3.5 4 22.533.544.55 vswr vs. v dd vswri vswro vswri, vswro v dd (v) (f=2.14ghz, v inv =v ctl =2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 22.533.544.55 i dd vs. v dd i dd (ma) v dd (v) (v inv =v ctl =2.7v, prf=off) i dd
NJG1116HB3 - 7 - electrical characteristics (lna high gain mode) 9 10 11 12 13 14 15 16 17 0.5 1 1.5 2 2.5 3 3.5 4 4.5 -50 0 50 100 gain, nf vs. temperature gain (db) nf (db) temperature ( o c) (f=2.14ghz, v dd =v inv =v ctl =2.7v) gain nf 6 7 8 9 10 11 12 13 14 -5 -4 -3 -2 -1 0 1 2 3 -50 0 50 100 oip3, iip3 vs. temperature oip3 (dbm) iip3 (dbm) temperature ( o c) (f=2.14+2.1401ghz, pin=-36dbm, v dd =v inv =v ctl =2.7v) oip3 iip3 -22 -20 -18 -16 -14 -12 -10 -8 -6 -50 0 50 100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) (f=2.14ghz, v dd =v inv =v ctl =2.7v) p-1db(in) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 vswr vs. temperature vswri vswro vswri, vswro temperature ( o c) (f=2.14ghz, v dd =v in v =v ctl =2.7v) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 i dd vs. temperature i dd (ma) temperature ( o c) (v dd =v inv =v ctl =2.7v, prf=off) i dd
NJG1116HB3 - 8 - electrical characteristics (lna high gain mode) s11, s22 s21, s12 vswr zin, zout s11, s22 (100mhz~20ghz) s21, s12 (100mhz~20ghz)
NJG1116HB3 - 9 - electrical characteristics (lna low gain mode) -50 -40 -30 -20 -10 0 10 -40 -30 -20 -10 0 10 20 pout vs. pin pout (dbm) pin (dbm) pout p-1db(in)=+11.0dbm (f=2.14ghz, v dd =v inv =2.7v, v ctl =0v) -10 -8 -6 -4 -2 0 -40 -30 -20 -10 0 10 20 gain vs. pin gain (db) pin (dbm) gain p-1db(in)=+11.0dbm (f=2.14ghz, v dd =v inv =2.7v, v ctl =0v) 0 1 2 3 4 5 6 7 8 2 2.05 2.1 2.15 2.2 2.25 2.3 nf vs. frequency noise figure (db) frequency (ghz) nf (v dd =v inv =2.7v, v ctl =0v) -100 -80 -60 -40 -20 0 20 -40-30-20-10 0 10 pout, im3 vs. pin pout, im3 (dbm) pin (dbm) pout im3 (f=2.14+2.1401ghz, v dd =v inv =2.7v, v ctl =0v) -10 -8 -6 -4 -2 0 2 4 -2 0 2 4 6 8 10 12 2.1 2.12 2.14 2.16 2.18 2.2 oip3, iip3 vs. frequency oip3 (dbm) iip3 (dbm) frequency (ghz) oip3 iip3 (df=100khz, pin=-20dbm, v dd =v in v =2.7v, v ctl =0v) 2 4 6 8 10 12 14 16 18 2.1 2.12 2.14 2.16 2.18 2.2 p-1db(in) vs. frequency p-1db(in) (dbm) frequency (ghz) p-1db(in) (v dd =v inv =2.7v, v ctl =0v)
NJG1116HB3 - 10 - electrical characteristics (lna low gain mode) -10 -9 -8 -7 -6 -5 -4 -3 -2 2 3 4 5 6 7 8 9 10 22.533.544.55 gain, nf vs. v dd gain (db) nf (db) v dd (v) (f=2.14ghz, v inv =2.7v, v ctl =0v) gain nf -12 -10 -8 -6 -4 -2 0 2 4 -2 0 2 4 6 8 10 12 14 22.533.544.55 oip3, iip3 vs. v dd oip3 (dbm) iip3 (dbm) v dd (v) (f=2.14+2.1401ghz, pin=-20dbm, v inv =2.7v, v ctl =0v) oip3 iip3 4 6 8 10 12 14 16 18 22.533.544.55 p-1db(in) vs. v dd p-1db(in) (dbm) v dd (v) (f=2.14ghz, v inv =2.7v, v ctl =0v) p-1db(in) 0 0.5 1 1.5 2 2.5 3 3.5 4 22.533.544.55 vswr vs. v dd vswri vswro vswri, vswro v dd (v) (f=2.14ghz, v inv =2.7v, v ctl =0v) 0 2 4 6 8 10 22.533.544.55 i dd vs. v dd i dd (ua) v dd (v) (v inv =2.7v, v ctl =0v, prf=off) i dd
NJG1116HB3 - 11 - electrical characteristics (lna low gain mode) -10 -9 -8 -7 -6 -5 -4 -3 -2 2 3 4 5 6 7 8 9 10 -50 0 50 100 gain, nf vs. temperature gain (db) nf (db) temperature ( o c) (f=2.14ghz, v dd =v inv =2.7v, v ctl =0v) gain nf -12 -10 -8 -6 -4 -2 0 2 4 -2 0 2 4 6 8 10 12 14 -50 0 50 100 oip3, iip3 vs. temperature oip3 (dbm) iip3 (dbm) temperature ( o c) (f=2.14+2.1401ghz, pin=-20dbm, v dd =v inv =2.7v, v ctl =0v) oip3 iip3 4 6 8 10 12 14 16 18 -50 0 50 100 p-1db(in) vs. temperature p-1db(in) (dbm) temperature ( o c) (f=2.14ghz, v dd =v inv =2.7v, v ctl =0v) p-1db(in) 0 0.5 1 1.5 2 2.5 3 3.5 4 -50 0 50 100 vswr vs. temperature vswri vswro vswri, vswro temperature ( o c) (f=2.14ghz, v dd =v in v =2.7v, v ctl =0v) 0 5 10 15 20 25 30 -50 0 50 100 i dd vs. temperature i dd (ua) temperature ( o c) (v dd =v inv =2.7v, v ctl =0v, prf=off) i dd
NJG1116HB3 - 12 - electrical characteristics (lna low gain mode) s11, s22 s21, s12 vswr zin, zout s11, s22 (100mhz~20ghz) s21, s12 (100mhz~20ghz)
NJG1116HB3 - 13 - test circuit recommended pcb design parts id comment l1, l3, taiyo-yuden (hk1005) l2, l4 matushita (eljrf) c1, c2 murata (grp15) 1 pin index vctl gnd rfin vinv gnd rfout 5 6 7 2 3 8 1 4 gnd gnd l1 3.9n h l2 5.6nh l3 2.2nh l4 8.2nh c1 2pf c2 1000pf v ctl =0v or 2.7v v inv =2.7v v dd =2.7v rf in rf out (top view) rf in rf out v dd v ctl v inv l1 l2 l3 l4 c1 c2 (top view) pcb (fr-4) : t=0.2mm microstrip line width =0.4mm (z 0 =50 ? ) pcb size=17.0mmx17.0mm
NJG1116HB3 - 14 - package outline (usb8-b3) cautions on using this product this product contains gallium-arsenide (gaas) which is a harmful material. ? do not eat or put into mouth. ? do not dispose in fire or break up this product. ? do not chemically make gas or powder with this product. ? to waste this product, please obey the relating law of your country. this product may be damaged with electric static discharge (esd) or spike voltage. please handle with care to avoid these dama g es. [caution] the specifications on this databook are only given for information , without any guarantee as regards either mistakes or omissions. the application circuits in this databook are described only to show representative usages of the product and not intended for the guarantee or permission of any right including the industrial rights. terminal treat :au pcb :fr5 molding material :epoxy resin unit :mm weight :4mg 0.0380.01 1pin index 0.40.1 (top view) (side view) 1.50.05 0.20.05 0.20.05 0.30.1 0.20.1 0.20.1 0.50.1 0.50.1 1.50.05 r0.075 765 123 8 4 0.140.05 0.80.05 (bottom view) 0.30.05 0.75

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